MGFS36E2527 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 2.5-2.7GHz HBT HYBRID IC

Preliminary
Specifications are subject to change without notice.
DESCRIPTION
MGFS36E2527 is GaAs RF amplifier designed
for WiMAX CPE.
FEATURES
• InGaP HBT Device
• 6V Operation
• 27dBm Linear Output Power
• 33dB Linear Gain
• Integrated Output Power Detector
• Integrated 1-bit 19dB Step Attenuator
• 50ohms Matched
• Surface Mount Package
• RoHS Compliant Package
APPLICATION
IEEE802.16-2004, IEEE802.16e-2005
FUNCTIONAL BLOCK DIAGRAM
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
2.5-2.7GHz HBT HYBRID IC
Outline Drawing
4.5
1.0
4.5
1
10
1 Pin
2 Vc
2
9
3 Vc
4 Vc
5 Vc
3
8
6 Pout
7 Po_det
4
7
8 GND
9 Vref
5
6
10 Vcont
(X-ray Top View)
DIM IN mm
Pin
Vcont
(0/3V)
Vc
Bias Circuit
Pout
Po_det
Vref
ELECTRICAL CHARACTERISTICS(Ta=25°C)
Symbol Parameter
Test Conditions*
f
Frequency
Gp
Gain
ηt
Efficiency
EVM EVM
ρin
Input Return Loss
Vdet Power Detector Voltage
ATT Control Gain Step
Ileak
Leakage Current
*NOTE : Ta=25°C, Zin=Zout=50Ω
Vc=6V, Vref=2.85V
Pout=27dBm
64QAM OFDM Modulation
Duty Cycle < 10%
Vcont=3V
Vc=6V, Vref=0V
Limits
Unit
Min Typ Max
2.5
2.7 GHz
33
dB
10
%
2.5
%
-10
dB
1.5
V
19
dB
10
µA
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/3)
October-2006