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MGFL48V1920_11 Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – 1.9-2.0 GHz BAND / 60W
< L/S band internally matched power GaAs FET >
MGFL48V1920
1.9 – 2.0 GHz BAND / 60W
DESCRIPTION
The MGFL48V1920 is a 60W push-pull type GaAs power FET
especially designed for use in 1.9 - 2.0 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
FEATURES
Push-pull configuration
 High output power
Pout=60W (TYP.) @f=1.9 - 2.0GHz
 High power gain
GLP=11.5dB (TYP.) @f=1.9 - 2.0GHz
 High power added efficiency
P.A.E.=45% (TYP.) @f=1.9 - 2.0GHz
APPLICATION
 item 01 : 1.9 - 2.0 GHz band power amplifier
QUALITY
 IG
RECOMMENDED BIAS CONDITIONS
 VDS=12V  ID=4.0A  RG=20ohm for each gate
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-20
VGSO Gate to source breakdown voltage
-10
PT *1 Total power dissipation
10
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
W
C
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
VGS(off) Gate to source cut-off voltage
P2dB
Output power at 2dB gain compression
GLP
Linear Power Gain
ID
Drain current
P.A.E.
Power added efficiency
Rth(ch-c) *2 Thermal resistance
*2 :Channel-case
VDS=3V,ID=17.3mA
VDS=12V,ID(RF off)=4.0A
f=1.9 - 2.0GHz
delta Vf method
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min.
-1
47
10
-
-
-
Limits
Typ.
-
48
11.5
11
45
1.0
Max.
-4
-
-
15
-
1.4
Unit
V
dBm
dB
A
%
C/W
Publication Date : Apr., 2011
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