MGFK41A4045 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 14.0-14.5 GHz BAND / 12W

< X/Ku band internally matched power GaAs FET >
MGFK41A4045
14.0 – 14.5 GHz BAND / 12W
DESCRIPTION
The MGFK41A4045 is an internally impedance-matched
GaAs power FET especially designed for use in 14.0 – 14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally impedance matched
 High output power
P1dB=41dBm (TYP.) @f=14.0 – 14.5GHz
 High linear power gain
GLP=7.0dB (TYP.) @f=14.0 – 14.5GHz
APPLICATION
 For use in 14.0 – 14.5 GHz band amplifiers
QUALITY GRADE
 IG
OUTLINE DRAWING Unit : millimeters
21.0 +/-0.3
(1)
0.6 +/-0.15
(2)
(2 )
R-1.6
(3 )
10.7
17.0 +/-0.2
12.0
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=3.0A  RG=50ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-15
VGSO Gate to source breakdown voltage
-10
ID
Drain current
11
IGR Reverse gate current
-36
IGF
Forward gate current
72
PT *1 Total power dissipation
68.2
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
GF-8
(1 ) GATE
(2 ) SOURCE (FLANGE)
(3 ) DRAIN
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VGS(off) ^{Gate to source cut-off voltage}
P1dB
Output power at 1dB gain compression
GLP
Linear Power Gain
PAE
Power added efficiency
Rth(ch-c) *2 Thermal resistance
*2 : Channel-case
VDS=3V,VG=0V
VDS=0V,ID=3.0A
VDS=3V,ID=42mA
VDS=10V,ID(RF off)=3.0A
f=14.0 – 14.5GHz
delta Vf method
Min.
-
-
-1
40
6
-
-
Limits
Typ.
8
4
-1.5
41
7
25
1.8
Max.
-
-
-4
-
-
-
2.2
Unit
A
S
V
dBm
dB
%
C/W
Publication Date : Apr., 2011
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