MGFK39V4045 Datasheet, PDF (1/1 Pages) Mitsubishi Electric Semiconductor – 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFK39V4045
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFK39V4045 is an internally impedance matched
GaAs power FET especially designed for use in 14.0~14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally impedance matched
High output power
P1dB=8W (TYP.) @f=14.0~14.5GHz
High linear power gain
GLP=5.5dB (TYP.) @f=14.0~14.5GHz
High power added efficiency
ηadd =20%(TYP.) @f=14.0~14.5GHz, P1dB
APPLICATION
For use in 14.0~14.5GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=2.4A
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
VGSO
Gate to source voltage
-15
V
ID
Drain current
6.0
A
IGR
Reverse gate current
IGF
Forward gate current
-18
mA
36
mA
PT
Total power dissipation
*1
42.8
W
Tch
Channel temperature
175
˚C
Tstg
Storage temperature
*1 : Tc=25˚C
-65 ~ +175
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VGS (off)
P1dB
Gate to source cut-off voltage
Output power at 1dB gain
compression
GLP
Linear power gain
ηadd
Power added efficiency
Rth (ch-c) Thermal resistance
*1
*1 : Channel to case
VDS=3V, VDS=0V
VDS=3V, ID=2.4A
VDS=3V, ID=20mA
VDS=10V, ID=2.4A, f=14.0~14.5GHz
∆Vf method
MITSUBISHI
ELECTRIC
Limits
Unit
Min. Typ. Max
—
4.0
6.0
A
1.2
2.0
—
S
-2
—
-5
V
38.5 39.0
—
dBm
4.5
5.5
—
dB
—
20
—
%
—
—
3.5 ˚C/W