MGFK38A3745_11 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – X/Ku band internally matched power GaAs FET

< X/Ku band internally matched power GaAs FET >
MGFK38A3745
13.75 – 14.50 GHz BAND / 6W
DESCRIPTION
The MGFK38A3745 is an internally impedance-matched
GaAs power FET especially designed for use in 13.75 – 14.50
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=6W (TYP.) @f=13.75 – 14.50GHz
 High linear power gain
GLP=8.0dB (TYP.) @f=13.75 – 14.50GHz
 High power added efficiency
P.A.E.=30% (TYP.) @f=13.75 – 14.50GHz
APPLICATION
 13.75 – 14.50 GHz band power amplifiers
QUALITY GRADE
 IG
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=1.5A  RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-15
VGSO Gate to source breakdown voltage
-10
PT *1 Total power dissipation
37.5
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
W
C
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
VGS(off) ^{Gate to source cut-off voltage}
P1dB
Output power at 1dB gain compression
GLP
Linear Power Gain
ID
Drain current
PAE
Power added efficiency
Rth(ch-c) *2 Thermal resistance
*2 : Channel-case
VDS=3V,ID=21mA
VDS=10V,ID(RF off)=1.5A
f=13.75 – 14.50GHz
delta Vf method
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min.
-1
37
7
-
-
Limits
Typ.
-1.5
38
8
1.8
30
3.6
Max.
-4
-
-
-
4
Unit
V
dBm
dB
A
%
C/W
Publication Date : Apr., 2011
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