MGFK30V4045_05 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFK30V4045
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFK30V4045 is an internally impedance matched
GaAs power FET especially designed for use in 14.0-14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
O UTL INE D RA W ING Unit : millimeters
11.0 +/-0.3
FEATURES
¶Internally impedance matched
¶Flip-chip mounted
¶High output power
P1dB = 1.1W(TYP.) @f=14.0-14.5GHz
¶High linear power gain
GLP = 8.0dB(TYP.) í @f=14.0-14.5GHz
¶High power added efficiency
íí íP.A.E.ý24æèTYP.)íí@f=14.0-14.5GHz
APPLICATION
¶For use in 14.0-14.5GHz band amplifiers
(1 )
0.5 +/-0.15
(2 )
(2 )
2R-0.9
(3 )
6.2+/-0.2
9.2 +/-0.2
QUALITY GRADE
¶IG
RECOMMENDED BIAS CONDITIONS
VDS =8 (V)
ID =350 (mA)
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR
Reverse gate current
IGF
Forward gate current
PT *1 Total power dissipation
Tch
Channel temperature
Tstg Storage temperature
*1 : Tc=25deg.C
Ratings
-15
-15
1000
-3
5
11
175
-65 / +175
Unit
V
V
Ę
Ę
Ę
W
deg.C
deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
9.0
G F -1 1
(1 ) G ATE
(2 ) SOU R C E (FL AN GE)
(3 ) D R AIN
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
Symbol
Parameter
IDSS
VGS(off)
gm
P1dB
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power at 1dB gain
compression
GLP Linear power gain
P.A.E. Power added efficiency
Rth (Ch-C) Thermal resistance *1
*1 : Channel to case
Test conditions
VDS=3V,VGS=0V
VDS=3V,ID=2mA
VDS=3V,ID=350mA
Min.
-
-2
-
29.5
VDS=10V, ID(RF off)=350mA, f=14.0 - 14.5GHz
7.0
-
Delta Vf method
-
Limits
Typ. Max.
800 1000
-
-5
300
-
31
-
Unit
mA
V
mS
dBm
8.0
-
dB
24
-
%
-
20 deg.C/W
MITSUBISHI
ELECTRIC
Jul-'05