MGFK25V4045_11 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – X/Ku band internally matched power GaAs FET

< X/Ku band internally matched power GaAs FET >
MGFK25V4045
14.0 – 14.5 GHz BAND / 0.3W
DESCRIPTION
The MGFK25V4045 is an internally impedance-matched
GaAs power FET especially designed for use in 14.0 – 14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system
Flip-chip mounted
 High output power
P1dB=0.3W (TYP.) @f=14.0 – 14.5GHz
 High linear power gain
GLP=9.0dB (TYP.) @f=14.0 – 14.5GHz
 High power added efficiency
P.A.E.=25% (TYP.) @f=14.0 – 14.5GHz
APPLICATION
 14.0 – 14.5 GHz band power amplifiers
QUALITY GRADE
 IG
RECOMMENDED BIAS CONDITIONS
 VDS=8V  ID=80mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID
Drain current
500
IGR Reverse gate current
-1
IGF
Forward gate current
1
PT *1 Total power dissipation
2.7
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
mA
mA
mA
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VGS(off) ^{Gate to source cut-off voltage}
P1dB
Output power at 1dB gain compression
GLP
Linear Power Gain
PAE
Power added efficiency
Rth(ch-c) *2 Thermal resistance
*2 : Channel-case
VDS=3V,VGS=0V
VDS=3V,ID=150mA
VDS=3V,ID=1mA
VDS=8V,ID(RF off)=150mA
f=14.0 – 14.5GHz
delta Vf method
Min.
-
-
-2
23
7
-
-
Limits
Typ.
200
100
-
26
9
25
-
Max.
500
-
-5
-
-
-
40
Unit
mA
mS
V
dBm
dB
%
C/W
Publication Date : Apr., 2011
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