MGFC5218 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – K-Band 2-Stage Power Amplifier

PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5218
K-Band 2-Stage Power Amplifier
DESCRIPTION
The MGFC5218 is a GaAs MMIC chip especially
designed for 18.0 ~ 19.0 GHz band High
Power Amplifier (MPA) .
BLOCK DIAGRAM
Vg1 Vg2 _{Vd1 Vd2}
FEATURES
RF frequency : 18.0 to 19.0 GHz
In
Out
P1dB
: ≥ 29.0 dBm(min.) @ 18.0 to 19.0 GHz
Vd1
Vg1 Vg2 _{Vd1 Vd2}
Chip size: 1940 µm x 2000 µm
TARGET SPECIFICATIONS (Ta=25˚C)
Symbol
IDSS1
IDSS2
Vp1
Vp2
Parameter
Drain Saturation Current
Drain Saturation Current
Pinch Off Voltage
Pinch Off Voltage
P1dB
Output Power at 1 dB
Compression Point
Gain
Gain
Input Return Loss Input Return Loss
Output Return Loss Output Return Loss
IM3
Inter Modulation Level
Test Conditions
Vd=3.0V
Vd=3.0V,Id=0.6mA
Vd=3.0V,Id=1.2mA
f=18 - 20 GHz,
Vd1=Vd2=6.0V ,
Id1=360mA*,
Id2=720mA*
f=18 - 20 GHz,
Vd1=Vd2=6.0V ,
Id1=360mA*,
Id2=720mA*
Pout=TBD
*:Ids at RF off
Min.
-2.0
-2.0
29.0
TBD
Limits
Typ.
720
1440
15.0
8.0
8.0
Max. Unit
mA
mA
-1.0
V
-1.0
V
dBm
dB
dB
dB
dBc
MITSUBISHI
ELECTRIC
as of July '98