MGFC5216 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – Q-Band 4-Stage Driver Amplifier

PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
DESCRIPTION
The MGFC5216 is a GaAs MMIC chip especially
designed for 37.0 ~ 40.0 GHz band Middle
Power Amplifier (MPA) .
FEATURES
RF frequency : 37.0 to 43.0 GHz
Linear gain : 20dB (TYP.)@ 37 to 40 GHz
20 dB(TYP.) @ 40 to 43 GHz
P1dB
: ≥ 16 dBm(min.) @ 37 to 40 GHz
≥ 16 dBm(target) @ 40 to 43 GHz
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5216
Q-Band 4-Stage Driver Amplifier
BLOCK DIAGRAM
Vg1
Vg2
IN
Vg3
Vg4
OUT
Vd1
Vd2
Vd3
Vd4
TARGET SPECIFICATIONS (Ta=25˚C)
Parameter
Frequeny
Linear Gain
P1dB
Input VSWR
Output VSWR
Vd
Vg
Chip Size
Min. Typical Max.
37
40
20
16
2.2
2.0
Vd12=4.5, Vd34=6
-0.3
1.99x0.83
Unit
GHz
dB
dBm
V
V
mm²
Specification
Frequeny
Linear Gain
P1dB
Input VSWR
Output VSWR
Vd
Vg
Chip Size
Min. Typical Max.
40
43
20
(16)
2.4
3.0
Vd12=4.5, Vd34=6
-0.3
1.99x0.83
Unit
GHz
dB
dBm
V
V
mm²
( ):Design Target (Now Evaluating)
PHOTOGRAPH
MITSUBISHI
ELECTRIC
as of July '98