MGFC5214 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – Q-Band 2-Stage Power Amplifier

PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
DESCRIPTION
The MGFC5214 is a GaAs MMIC chip especially
designed for 37.0 ~ 40.0 GHz band High
Power Amplifier (HPA) .
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5214
Q-Band 2-Stage Power Amplifier
BLOCK DIAGRAM
GND Vg1 Vd1 Vg2 Vd2
FEATURES
RF frequency : 37.0 to 43.0 GHz
RFin
Linear gain : 12 dB (TYP.)@ 37 to 40 GHz
10 dB(TYP.) @ 40 to 43 GHz
P1dB
: ≥ 23 dBm(min.) @ 37 to 40 GHz
≥ 23 dBm(target) @ 40 to 43 GHz
RFout
TARGET SPECIFICATIONS (Ta=25˚C)
Parameter
Frequeny
Linear Gain
P1dB
Input VSWR
Output VSWR
Vd
Vg
Chip Size
Min. Typical Max.
37
40
12
23
2.0
2.0
Vd1=4.5, Vd2=6
-0.2
1.99x1.60
Unit
GHz
dB
dBm
V
V
mm2
Parameter
Frequeny
Linear Gain
P1dB
Input VSWR
Output VSWR
Vd
Vg
Chip Size
Min. Typical Max.
40
43
10
(23)
2.2
2.3
Vd1=4.5, Vd2=6
-0.2
1.99x1.60
Unit
GHz
dB
dBm
V
V
mm2
GND (Vg1) Vd1 Vg2 Vd2
PHOTOGRAPH
MITSUBISHI
ELECTRIC
as of July '98