MGFC5213 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – K-Band 2-Stage Power Amplifier

PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
DESCRIPTION
The MGFC5213 is a GaAs MMIC chip especially
designed for 27.5 ~ 30.0 GHz band High
Power Amplifier (HPA) .
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5213
K-Band 2-Stage Power Amplifier
BLOCK DIAGRAM
Vg1 Vg2 Vd1 _Vd2
FEATURES
RF frequency : 27.5 to 30.0 GHz
Linear gain : ≥ 9 dB
P1dB : ≥ 29 dBm
DC power : Vd = 5 V, Id1 + Id2 = 1080 mA
In
Vd1
Vg1 Vg2 _{Vd1 Vd2}
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Symbol
Vd1, Vd2
Vg1, Vg2
Id1
Id2
Pin
Ta
Tstg
Tmax
Parameter
Drain supply voltage
Gate supply voltage
Drain current 1
Drain current 2
RF input power
Backside ambient temp.
Storage temp.
Maximum assembly temp.
Ratings
6
-3 ^~ 0.5
480
960
25
-20 ^~ +70
-65 ^~ +175
+300
Out
Units
V
V
mA
mA
dBm
˚C
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
Symbol
Parameter
Conditions
Gain
Gain
VSWR in Input VSWR
VSWR out
P1dB
Output VSWR
Output power at 1 dB
compression point
Vd = 5 V
Id1 = 360 mA
Id2 = 720 mA
(RF off)
f = 27.5, 30.0 GHz
Single tone
Limits
Min. Typ.
Max.
Units
9.0
dB
3.0
-
3.0
-
29.0
dBm
MITSUBISHI
ELECTRIC
as of July '98