MGFC5110 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – Ka-Band 3-Stage Self Bias Low Noise Amplifier

PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5110
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DESCRIPTION
The MGFC5110 is a GaAs MMIC chip
especially designed for 37.0 ~ 40.0 GHz band
Low Noise Amplifier.(LNA) .
BLOCK DIAGRAM
Vd1 Vd2 Vd3
FEATURES
RF frequency : 37.0 to 40.0 GHz
Super Low Noise NF=3.5dB (TYP.)
In
Out
PHOTOGRAPH
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Vd Drain bias voltage
Parameter
Id Drain bias current
Vg Gate bias voltage
Pin Maximum peak input power overdrive (Duration < 1sec)
Ta Operating temperature range
TARGET SPECIFICATIONS (Ta=25˚C)
Symbol
Fop
Gain
Delta gain
NF
VSWR in
VSWR out
P1dB
Output IP3
Vd
Id
Vg
Parameter
Test conditions
Operating frequency
range
Small signal gain
Small signal gain flatness
Noise figure
On-wafer
measurement
Input VSWR
Output VSWR
Output power at 1 dB
compression
Output power at 3rd-
order intercept point
Drain bias voltage
Drain bias current
Gate bias voltage
Freq=30GHz
Vd=2V,Id=20mA
MITSUBISHI
ELECTRIC
Values
3
30
-
TBD
TBD
Unit
V
mA
V
dBm
˚C
Limits
Min.
Typ. Max. ^Unit
37.0
40.0 GHz
17.0 18.0
1.5
3.5
2.0:1
2.0:1
(5)
TBD
(17)
TBD
2.5
30
No need
dB
dB
dB
dBm
dBm
V
mA
V
as of July '98