MGFC47B3538B Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – C band Internally Matched Power GaAs FET

<C band Internally Matched Power GaAs FET>
MGFC47B3538B
3.5 – 3.8GHz BAND / 50W
DESCRIPTION
The MGFC47B3538B is an internally impedance-matched GaAs
power FET especially designed for use in 3.5 – 3.8 GHz band
amplifiers. The hermetically sealed metal-ceramic package
guarantees high reliability.
FEATURES
Crass AB operation
Internally matched to 50(ohm)
 High output power: Po(SAT) = 50 W (typ.)
 High power gain: GP = 10 dB (TPE.) @Po = 37dBm
 Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm
Recommended Bias Condition
 Vd = 12(V)
 ID = 1.5 (A)
 Rg = 10 ohm
OUTLINE DRAWING
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
MAXID Maximum drain current
PT *1 Total power dissipation
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25deg.C
GF-60
(Ta=25deg.C)
Ratings
-15
-10
12
115
175
-55 / +150
Unit
V
V
A
W
deg.C
deg.C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable, but there is always the possibility
that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such as
(I) placement of substitutive , auxiliary circuits , (ii)
use of non-flammable material or (iii) prevention
against any malfunction or mishap.
ELECTRICAL CARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
VGS(off) Gate to source cut-off voltage
VDS = 3V , ID = 100mA
Po(SAT) Output power
GP
Power gain
VDS=12V, ID(RF off)=1.5A, f=3.5-3.8GHz
ID
Drain current
VDS=12V, ID(RF off)=1.5A, f=3.5-3.8GHz
EVM *2 Error Vector Magnitude
Rth(ch-c) *3 _{Thermal resistance}
Pout=37dBm
delta Vf method
*2 :WiMAX Downlink , 64QA M-3/4, Channel Bandwidth: 7MHz
*3 : Channel-case
Publication Date : May, 2012
1
Limits
Unit
Min. Typ. Max.
-0.5
-
-3.0
V
-
47
-
dBm
9.0
10.5
-
dB
-
2.0
3
A
-
1.5
2.5
%
-
0.65
1.2 ^deg.C/W