MGFC47A7785 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC47A7785
7.7 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC47A7785 is an internally impedance-matched
GaAs power FET especially designed for use in 7.7 8.5
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 46.7dBm (TYP.) @ f=7.7 8.5GHz
High power gain
GLP = 5.7 dB (TYP.) @ f=7.7 8.5GHz
High power added efficiency
P.A.E. = 30 % (TYP.) @ f=7.7 8.5GHz
OUTLINE DRAWING
Unit : millimeters
24+/-0.3
(1)
(2)
(3)
0.7+/-0.15
APPLICATION
Solid-state power amplifier for satellite earth-station
communication transmitter and VSAT
20.4+/-0.2
16.7
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 9.8 (A)
RG= 10 (ohm)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
IGR
Reverse gate current
IGF
Forward gate current
PT
Total power dissipation *1
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25 deg.C
(Ta=25 deg.C)
Ratings
Unit
-20
V
-10
V
-130
mA
168
mA
168
W
175
deg.C
-65 / +175 deg.C
GF-53
(1) : Gate
(2) : Source
(3) : Drain
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to
safety when making your circuit designs, with appropriate
measures such as (1)placement of substitutive, auxiliary
circuits, (2)use of non-flammable material or (3)prevention
against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25 deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min. Typ. Max.
VGS(off) Pinch-off voltage
VDS=3V, ID=168mA
-1
-
-4
V
P1dB
Output power at 1dB gain compression
45.7 46.7
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=9.8A, f=7.7~8.5GHz
4.7
5.7
-
dB
ID
Drain current
-
11
-
A
P.A.E.
Power added efficiency
-
30
-
%
IM3
3rd order IM distortion *1
-39
-42
-
Rth(ch-c) Thermal resistance
*2
Delta Vf method
-
0.8
0.9 deg.C/W
*1 : item -51,2 tone test,Po=35dBm Single Carrier Level,f=8.5GHz,Delta f=10MHz *2 : Channel-case
MITSUBISHI
ELECTRIC
June/2004