MGFC45V6472A_04 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V6472A is an internally impedance-matched
GaAs power FET especially designed for use in 6.4-7.2
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=6.4-7.2 GHz
High power gain
GLP = 8 dB (TYP.) @ f=6.4-7.2GHz
High power added efficiency
PAE = 28 % (TYP.) @ f=6.4-7.2GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
OUTLINE DRAWING Unit:millimeters (inches)
24 +/- 0.3
(1)
0.6 +/- 0.15
R1.2
(2)
(3)
APPLICATION
item 01 : 6.4-7.2 GHz band power amplifier
item 51 : 6.4-7.2 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8.0 (A)
RG=25 (ohm)
20.4 +/- 0.2
16.7
G F -38
(1) GAT E
(2 ) S O U R C E (F IAN G E )
(3 ) D R AIN
ABSOLUTE MAXIMUM RATINGS
(Ta=25 deg.C)
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID Drain current
IGR Reverse gate current
IGF Forward gate current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25 deg.C
Ratings
-15
-15
25
-80
168
150
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CARACTERISTICS
(Ta=25 deg.C)
Symbol
Parameter
Test conditions
Min.
IDSS Saturated drain current
VDS=3V, VGS=0V
-
Gm Transconductance
VDS=3V, ID=6.4A
-
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain
compression
GLP Linear power gain
VDS = 3V , ID = 120mA
-
44.5
VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz
7
PAE Power added efficiency
-
IM3 3rd order IM distortion *1
-42
Rth(ch-c) Thermal resistance *2
Delta Vf method
-
*1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case
Limits
Typ.
24
8
-
45
8
35
-45
-
Unit
Max.
-
A
-
V
-5
V
-
dBm
-
dB
-
%
-
dBc
1.0 deg.C/W
MITSUBISHI
ELECTRIC
June/2004