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MGFC45V5964A_04 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V5964A
5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V5964A is an internally impedance matched
GaAs power FET especially designed for use in 5.9 - 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally matched to 50 ohm system
High output power
P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz
High power gain
GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=34.5dBm S.C.L.
APPLICATION
5.9 - 6.4 GHz band power amplifier
O U T L IN E D R A W IN G U nit:m illim e te rs (inc he s )
R 1.2
24 + /- 0.3
(1)
0.6 + /- 0.15
(2)
(3)
20.4 +/- 0.2
16.7
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8 (A)
Rg=25 (ohm) Refer to Bias Procedure
G F -38
(1) GATE
(2) SOURCE(FIANGE)
(3) DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID Drain current
IGR Reverse gate current
IGF Forward gate current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25 Deg.C
Ratings
-15
-15
25
-80
168
150
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
Min
IDSS Saturated drain current
VDS = 3V , VGS = 0V
-
Gm
Transconductance
VDS = 3V , ID = 8A
-
VGS(off) Gate to source cut-off voltage
VDS = 3V , ID = 160mA
-2
P1dB
Output power at 1dB gain
compression
44
GLP Linear power gain
VDS=10V, ID(RF off)=8A, f=5.9-6.4GHz
8
PAE Power added efficiency
-
IM3 3rd order IM distortion *1
-42
Rth(ch-c) Thermal resistance *2
Delta Vf method
-
*1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz *2 : Channel-case
Limits
Typ
24
8
-
45
9
33
-45
0.8
Unit
Max
-
A
-
S
-5
V
-
dBm
-
dB
-
%
-
dBc
1.0 Deg.C/W
MITSUBISHI
ELECTRIC
June/2004