MGFC45V5964A Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET

PRELIMINARY
Notice : This is not a final specification.
Some parametric limits are subject to change.
27-March'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V5964A
5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V5964A is an internally impedance matched
GaAs power FET especially designed for use in 5.9 - 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally matched to 50 ohm system
High output power
P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz
High power gain
GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-42 dBc(MIN.)@Po=34.5dBm S.C.L.
OUTLINE DRAWING Unit:millimeters (inches)
24 +/- 0.3
(1)
0.6 +/- 0.15
R1.2
(2)
(3)
APPLICATION
5.9 - 6.4 GHz band amplifiers
QUALITY GRADE
IG
20.4 +/- 0.2
16.7
RECOMMENDED BIAS CONDITIONS
V_DS = 10V
ID = 8 A
Rg=25 ohm Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
GF-38
(1) GATE
(2) SOURCE(FIANGE)
(3) DRAIN
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID Drain current
IGR Reverse gate current
IGF Forward gate current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25 Deg.C
Ratings
-15
-15
30
-60
126
125
175
-65/+175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
IDSS Saturated drain current
VDS = 3V , VGS = 0V
Gm
Transconductance
VDS = 3V , ID = 8A
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain
compression
GLP Linear power gain
VDS = 3V , ID = 160mA
VDS = 10V , ID = 8A , f = 5.9 - 6.4 GHz
PAE Power added efficiency
IM3
3rd order IM distortion
Rth(ch-c) Thermal resistance *1
Delta Vf method
*1 : Channel to case
*2 : Item-51,2tone test,Po=34.5dBm Single Carrier Level,f=6.4GHz, Delta f=10MHz
Limits
Unit
Min Typ Max
-
24
-
A
-
8
-
S
-
-
-5
V
44.5 45
-
dBm
8
9
-
dB
-
33
-
%
-42
-45
-
dBc
-
1.0 Deg.C/W
MITSUBISHI
ELECTRIC