MGFC45V5053A Datasheet, PDF (1/1 Pages) Mitsubishi Electric Semiconductor – 5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V5053A
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFC45V5053A is an internally impedance matched
GaAs power FET especially designed for use in 5.05~5.25
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES (TARGET)
Internally matched to 50 (Ω) system
High output power
P1dB=32W (TYP.) @f=5.05~5.25GHz
High power gain
GLP=10.0dB (TYP.) @f=5.05~5.25GHz
High power added efficiency
P.A.E.=33% (TYP.) @f=5.05~5.25GHz
Low distortion [item -51]
IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
APPLICATION
5.05~5.25GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=8A
RG=25Ω Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR
Reverse gate current
IGF
Forward gate current
PT
Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25°C
Ratings Unit
-15
V
-15
V
20
A
-80
mA
168
mA
*1
150
W
175
°C
-65 ~ +175 °C
OUTLINE DRAWING
Until : millimeters (inches)
24±0.3 (0.945±0.012)
R1.2
(0.024±0.006)
0.6±0.15
20.4±0.2 (0.803±0.008)
16.7 (0.658)
GF-38
(1) GATE
(2) Source (FLANGE)
(3) DRAIN
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Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Limits
Unit
Min. Typ. Max
IDSS
Saturated drain current
VDS=3V, IGS=0V
—
24
—
V
Gm
Transconductance
VDS=3V, ID=8V
—
8
—
S
VGS (off) Gate to Source cut-off voltage
VDS=3V, ID=160mA
-2
—
-5
V
P1dB
Output power at 1dB gain
compression
44
45
—
dBm
GLP
Linear power gain
VDS=10V, ID=8A, f=5.05~5.25GHz
9
9.5
—
dB
P.A.E.
Power added efficiency
—
34
—
%
IM3 *2 3rd order IM distortion
Rth (ch-c) Thermal resistance
*1 ∆Vf method
-42
-45
—
dBc
—
0.8
1.0 °C/W
*1 : Channel to case
*2 : Item-51,2tone test, Po=34.5dBm Single Carrier Level, f=5.05, 5.15, 5.25GHz, Delta f=5MHz
MITSUBISHI
ELECTRIC