MGFC45V3642A_04 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3642A
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V3642A is an internally impedance-matched
GaAs power FET especially designed for use in 3.6 - 4.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE
24 +/- 0.3
unit : mm
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz
High power gain
GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz
High power added efficiency
P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 3.6 - 4.2 GHz band power amplifier
item 51 : 3.6 - 4.2 GHz band digital radio communication
QUALITY GRADE
IG
0.6 +/- 0.15
(1)
R1.2
(2)
(3)
20.4 +/- 0.2
16.7
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8 (A)
RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C) G F -3 8
(1) gate
(2) source(flange)
(3)drain
< Keep safety first in your circuit designs! >
Symbol
Parameter
Ratings
Unit
Mitsubishi Electric Corporation puts the maximum effort into
VGDO Gate to drain voltage
-15
V
making semiconductor products better and more reliable,
VGSO Gate to source voltage
-15
V
but there is always the possibility that trouble may occur
ID
Drain current
25
A
with them. Trouble with semiconductors may lead to personal
IGR
Reverse gate current
-80
mA
injury, fire or property damage. Remember to give due
IGF
Forward gate current
168
mA
consideration to safety when making your circuit designs,
PT *1 Total power dissipation
150
W
with appropriate measures such as (1)placement of
Tch
Channel temperature
175
deg.C
substitutive, auxiliary circuits, (2)use of non-flammable
Tstg
Storage temperature
-65 / +175
deg.C
material or (3)prevention against any malfunction or mishap.
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
gm
Transconductance
VDS = 3V , ID = 8A
VGS(off) Gate to source cut-off voltage
VDS = 3V , ID = 160mA
P1dB
Output power at 1dB gain
compression
GLP
Linear power gain
VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz
ID
Drain current
P.A.E.
Power added efficiency
IM3 *2
3rd order IM distortion
Rth(ch-c) *3 Thermal resistance
delta Vf method
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.6,3.9,4.2GHz,delta f=10MHz
*3 : Channel-case
MITSUBISHI
ELECTRIC
Limits
Unit
Min. Typ. Max.
-
24
-
A
-
8
-
S
-2
-
-5
V
44
45
-
dBm
10
11
-
8
-
36
-42
-45
-
0.8
-
dB
-
A
-
%
-
dBc
1
deg.C/W
June/2004