MGFC45V3642A Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
DESCRIPTION
The MGFC45V3642A is an internally impedance-matched
GaAs power FET especially designed for use in 3.6 - 4.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz
High power gain
GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz
High power added efficiency
P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 3.6 - 4.2 GHz band power amplifier
item 51 : 3.6 - 4.2 GHz band digital ratio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8 (A)
RG=25 (ohm)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3642A
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
OUTLINE
unit : mm
MIN0.2
2
.
0
2-
/ ^-R1.2
+/
+
4
.
7
1
0
.
8
N
I
M
42
.
0
-
/
+
3
.
44
.
1
GF-38
24 +/- 0.3
0.6 +/- 0.15
(1)
(2)
(3)
20.4 +/- 0.2
16.7
5
02
..
00
--
//
++
14
..
02
(1) gate
(2) source(flange)
(3)drain
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
IGR
IGF
PT *1
Tch
Tstg
*1 : Tc=25deg.C
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
(Ta=25deg.C)
Ratings
-15
-15
20
-80
168
150
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
gm
Transconductance
VDS = 3V , ID = 8A
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 160mA
P1dB
Output power at 1dB gain
compression
GLP
Linear power gain
VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz
ID
Drain current
P.A.E.
Power added efficiency
IM3 *2
3rd order IM distortion
Rth(ch-c) *3
Thermal resistance
delta Vf method
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.6,3.9,4.2GHz,delta f=10MHz
*3 : Channel-case
MITSUBISHI
ELECTRIC
Limits
Unit
Min.
Typ.
Max.
-
24
-
A
-
8
-
S
-2
-
-5
V
44
45
-
dBm
10
11
-
8
-
36
-42
-45
-
0.8
-
dB
-
A
-
%
-
dBc
1
deg.C/W
Feb.'99