MGFC45V3436A_04 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3436A
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V3436A is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
O U TLIN E
24 +/- 0.3
unit : m m
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 36 % (TYP.) @ f=3.4 - 3.6GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
item 51 : 3.4 - 3.6 GHz band digital radio communication
QUALITY GRADE
IG
0.6 +/- 0.15
(1 )
R 1 .2
(2 )
(3 )
20.4 +/- 0.2
1 6 .7
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8 (A)
RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR
Reverse gate current
IGF
Forward gate current
PT *1 Total power dissipation
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25deg.C
Ratings
-15
-15
25
-80
168
150
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
G F -38
(1) gate
(2 ) sou rce (fla ng e )
(3 )dra in
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
gm
Transconductance
VDS = 3V , ID = 8A
VGS(off)
P1dB
GLP
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain
VDS = 3V , ID = 160mA
VDS=10V, ID(RF off)=8A, f=3.4 - 3.6GHz
ID
Drain current
P.A.E.
Power added efficiency
IM3 *2
3rd order IM distortion
Rth(ch-c) *3 Thermal resistance
delta Vf method
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.4,3.5,3.6GHz,delta f=10MHz
*3 : Channel-case
MITSUBISHI
ELECTRIC
Limits
Unit
Min. Typ. Max.
-
24
-
A
-
8
-
S
-2
-
-5
V
44
45
-
dBm
11
12
-
8
-
36
-42
-45
-
0.8
-
dB
-
A
-
%
-
dBc
1
deg.C/W
Oct-'03