MGFC45V3436A Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET

PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3436A
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V3436A is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 36 % (TYP.) @ f=3.4 - 3.6GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
item 51 : 3.4 - 3.6 GHz band digital ratio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8 (A)
RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
VGDO
VGSO
ID
IGR
IGF
PT *1
Tch
Tstg
*1 : Tc=25deg.C
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
Ratings
-15
-15
20
-80
168
150
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
OUTLINE
unit : mm
2
.N ²
0I ^.
M0
-2
/ ^-R1.2
+/
+
4
.0
7.
18
N
I
M
24
.
0
-
/
+
3
.
44
.
1
GF-38
24 +/- 0.3
0.6 +/- 0.15
(1)
(2)
(3)
20.4 +/- 0.2
16.7
5
02
..
00
--
//
++
14
..
02
(1) gate
(2) source(flange)
(3)drain
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
gm
VGS(off)
Transconductance
Gate to source cut-off voltage
VDS = 3V , ID = 8A
VDS = 3V , ID = 160mA
P1dB
Output power at 1dB gain
compression
GLP
ID
Linear power gain
Drain current
VDS=10V, ID(RF off)=8A, f=3.4 - 3.6GHz
P.A.E.
Power added efficiency
IM3 *2
3rd order IM distortion
Rth(ch-c) *3
Thermal resistance
delta Vf method
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.4,3.5,3.6GHz,delta f=10MHz
*3 : Channel-case
MITSUBISHI
ELECTRIC
Limits
Unit
Min.
Typ.
Max.
-
24
-
A
-
8
-
S
-2
-
-5
V
44
45
-
dBm
11
12
-
8
-
36
-42
-45
-
0.8
-
dB
-
A
-
%
-
dBc
1
deg.C/W
Mar.'99