MGFC45B3436B Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45B3436B
3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45B3436B is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING
FEATURES
Class AB operation
Internally matched to 50(ohm) system
High output power
Po(SAT) = 30W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
GLP = 11 dB (TYP.) @ f=3.4 - 3.6 GHz
Distortion
ACP = -45dBc (TYP.) @ f=3.4 - 3.6 GHz
RECOMMENDED BIAS CONDITIONS
VDS = 12 (V)
ID = 0.8 (A)
RG=12 (ohm)
GF-60
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
MAXID Maximum drain current
PT *1 Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25deg.C
(Ta=25deg.C)
Ratings
-15
-10
10
78
175
-65 / +175
Unit
V
V
A
W
deg.C
deg.C
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Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
VGS(off) Gate to source cut-off voltage
VDS = 3V , ID = 100mA
Po(SAT)
Output power
VDS=12V, ID(RF off)=0.8A, f=3.4-3.6GHz
GLP
Linear power gain
ID
Drain current
ACP *2 Adjacent Channel leakage Power
Rth(ch-c) *3
Thermal resistance
VDS=12V, ID(RF off)=0.8A, f=3.4-3.6GHz
Pout=34dBm
delta Vf method
*2 :Mod.3GPP TEST MODEL 1 64code Single Signal
*3 : Channel-case
Min.
-0.5
-
10
-
-
-
Limits
Typ. Max.
-
-3.0
45
-
11
-
1.2
1.5
-45
-
-
1.9
Unit
V
dBm
dB
A
dBc
deg.C/W
MITSUBISHI
ELECTRIC
(1/6)
Apr. 2007