MGFC44V3436 Datasheet, PDF (1/1 Pages) Mitsubishi Electric Semiconductor – 3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC44V3436
3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC44V3436 is an internally impedance matched
GaAs power FET especially designed for use in 3.4~3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING Until : millimeters (inches)
(1)
FEATURES (TARGET)
Class A operation
Internally matched to 50 (Ω) system
High output power
P1dB=25W (TYP.) @f=3.4~3.6GHz
High power gain
GLP=12dB (TYP.) @f=3.4~3.6GHz
High power added efficiency
P.A.E.=36% (TYP.) @f=3.4~3.6GHz
Loe distortion [item -51]
IM3= -45dBc (TYP.) @Po=33.5dBm S.C.L.
APPLICATION
item 01 : 3.4~3.6GHz band power amplifier
item 51 : 3.4~3.6GHz band digital radio communication
(2)
(3)
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=6.4A
RG=25Ω
GF-38
(1) GATE
(2) Source (FLANGE)
(3) DRAIN
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol
Parameter
Ratings Unit
VGDO Gate to drain voltage
VGSO Gate to source voltage
-15
V
-15
V
ID
Drain current
IGR
Reverse gate current
IGF
Forward gate current
20
A
-60
mA
126
mA
PT
Total power dissipation
*1
125
W
Tch Channel temperature
175
°C
Tstg Storage temperature
-65 ~ +175 °C
*1 : Tc=25°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
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Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
Symbol
Parameter
Test conditions
Min.
IDSS
Saturated drain current
VDS=3V, VGS=0V
—
gm
VGS (off)
P1dB
GLP
Transconductance
Gate to source cut off voltage
Output power at 1dB gain
compression
Linear power gain
VDS=3V, ID=6.4A
—
VDS=3V, ID=120mA
-2
43
VDS=10V, ID (RF off)=6.4A, f=3.4-3.6GHz 11
ID
Drain current
—
P.A.E.
Power added efficiency
—
IM3 *2 3rd order IM distortion
-42
Rth (ch-c) Thermal resistance
*3 ∆Vf method
—
*2 : item-51, 2 tone test, Po=33.5dBm Single Carrier Level, f=3.4, 3.5, 3.6GHz, ∆f=10MHz
*3 : Channel to case
Limits
Typ.
18
6.5
—
44
12
6.4
36
-45
—
Max ^Unit
—
A
—
S
-5
V
— dBm
—
dB
—
A
—
%
— dBc
1.2 °C/W
MITSUBISHI
ELECTRIC
as of Feb.'98