MGFC4419G Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – InGaAs HEMT Chip

PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
DESCRIPTION
The MGFC4419G low-noise HEMT(High electron Mobility
Transistor) is designed for use in X to K band amplifiers.
FEATURES (TARGET)
Low noise figure
NFmin,=0.5 dB (MAX.)
@ f=12GHz
High associated gain
Gs=12.0 dB (MIN.)
@ f=12GHz
APPLICATION
X to K band amplifiers.
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
Refer to Bias Procedure
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC4419G
InGaAs HEMT Chip
OUTLINE DRAWING
ABSOLUTE MAXIMUM RATINGS ^{( Ta=25°C )}
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
PT
Total power dissipation
Tch Channel temperature
Ratings Unit
-4
V
-4
V
60
mA
50
mW
125
°C
Tstg Storage temperature
-65 ~ +125 °C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS ^{( Ta=25°C )}
Symbol
V(BR)GDO
IGSS
IDSS
VGS (off)
gm
Gs
NFmin
Parameter
Test conditions
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to Source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
IG= -10µA
VGS=2V, VDS=0V
VDS=2V, VGS=0V
VDS=2V, ID=500µA
VDS=2V, ID=10mA
VDS=2V, ID=10mA
f=12GHz
Limits
Min. Typ. Max
-3
—
—
—
—
50
—
—
60
-0.1 — -1.5
—
75
—
12
13.5 —
—
—
0.5
Unit
V
µA
mA
V
mS
dB
dB
MITSUBISHI
ELECTRIC
as of Jan.'98
(1/4)