MGFC42V3436_04 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V3436
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC42V3436 is an internally impedance-matched
OUTLINE DRAWING Unit: millimeters
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
24+/-0.3
package guarantees high reliability.
R1.25
(1)
FEATURES
0.6+/-0.15
Class A operation
R1.2
Internally matched to 50(ohm) system
High output power
P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
(2)
GLP = 14 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz
Low distortion [item -51]
(3)
IM3=-45dBc(Min.) @Po=32dBm S.C.L.
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
item 51 : 3.4 - 3.6 GHz band digital radio communication
20.4+/-0.2
13.4
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 4.5 (A)
RG=25 (ohm)
GF-18
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR
Reverse gate current
IGF
Forward gate current
PT
Total power dissipation *1
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25deg.C
Ratings
-15
-15
15
-40
84
78.9
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
gm
Transconductance
VDS = 3V , ID = 4.4A
VGS(off) Gate to source cut-off voltage
VDS = 3V , ID = 80mA
P1dB
Output power at 1dB gain
compression
GLP
Linear power gain
VDS=10V, ID(RF off)=4.5A, f=3.4 - 3.6GHz
ID
Drain current
P.A.E.
Power added efficiency
IM3
3rd order IM distortion *1
Rth(ch-c)
Thermal resistance *2
delta Vf method
*1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=3.6GHz, delta f=5MHz
*2 : Channel-case
MITSUBISHI
ELECTRIC
Limits
Unit
Min. Typ. Max.
-
11
-
A
-
4
-
S
-
-
-4.5
V
41.5 42.5
-
dBm
12
14
-
dB
-
4.5
-
A
-
37
-
%
-42
-45
-
dBc
-
-
1.9 deg.C/W
June/2004