MGFC41V7177 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V7177
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC41V7177 is an internally impedence matched
GaAs power FET especially designed for use in 7.1 - 7.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high raliability.
FEATURES
Internally matched to 50ohm system
High output power
P1dB = 12W (TIP.) @ f=7.1 - 7.7 Hz
High power gain
GLP = 9.5 dB (TYP.) @ f=7.1 - 7.7 GHz
High power added efficiency
Eadd = 33 % (TYP.) @ f=7.1 - 7.7 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
APPLICATION
7.1 - 7.7GHz band amplifiers
OUTLINE DRAWING
Unit: millimeters (inches)
R1.25
24+ /-0 .3
(1)
0.6+/-0.15
R1.2
(2)
(3)
20. 4+ / -0. 2
13.4
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10V
ID = 3.4 A
Rg = 50(ohm) Refer to Bias Procedure
GF-18
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_GDO
V_GSO
I_D
I_GR
I_GF
P_T
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25 DegreesC
Ratings
Unit
-15
V
-15
V
12
A
-30
mA
63
mA
53.6
W
175
DegreesC
-65 to +175 DegreesC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
Min
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
gm
Transconductance
VDS = 3V , ID = 3.0A
-
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain
compression
GLP
Linear power gain
VDS = 3V , ID = 30mA
-
40
VDS = 10V , ID = 3.4A , f = 7.1 - 7.7 GHz 7
Eadd
Power added efficiency
-
IM3 *2 3rd order IM distortion
-42
Rth(ch-c) Thermal resistance *1
Delta Vf method
-
*1 : Channel to case
*2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=7.7GHz,Delta f=10MHz
Limits
Typ Max
-
12
3
-
-
-5
41
-
8
-
30
-
-45
-
-
2.8
Unit
A
S
V
dBm
dB
%
dBc
C/W
MITSUBISHI
ELECTRIC