MGFC41V3642_04 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V3642
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC41V3642 is an internally impedence matched
GaAs power FET especially designed for use in 3.6 - 4.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high raliability.
FEATURES
Internally matched to 50ohm system
High output power
P1dB = 14W (TIP.) @ f=3.6 - 4.2 Hz
High power gain
GLP = 12.5 dB (TYP.) @ f=3.6 - 4.2 GHz
High power added efficiency
Eadd = 40 % (TYP.) @ f=3.6 - 4.2 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
APPLICATION
item 01 : 3.6 - 4.2 GHz band power amplifier
item 51 : 3.6 - 4.2 GHz band digital radio communication
OUTLINE DRAWING
Unit: millimeters (inches)
R1.25
24+ /-0.3
(1)
0.6+ /-0.15
R1.2
(2)
(3)
20 .4 + /-0.2
13.4
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10(V)
ID = 3.4 (A)
Rg = 50(ohm) Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
GF-18
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
Symbol
Parameter
V_GDO
V_GSO
I_D
I_GR
I_GF
P_T
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25 DegreesC
Ratings
-15
-15
12
-30
63
53.6
175
-65 / +175
Unit
V
V
A
mA
mA
W
DegreesC
DegreesC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
gm
Transconductance
VDS = 3V , ID = 3.0A
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain
compression
GLP
Linear power gain
VDS = 3V , ID = 30mA
VDS = 10V , ID = 3.4A , f = 3.6 - 4.2 GHz
ID Drain current
Eadd
Power added efficiency
IM3 *2 3rd order IM distortion
Rth(ch-c) Thermal resistance *1
Delta Vf method
*1 : Channel to case
*2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=4.2GHz,Delta f=10MHz
Limits
Unit
Min
Typ
Max
-
-
12
A
-
3
-
S
-
-
-5
V
40
41.5
-
dBm
11
12.5
-
dB
-
3.3
-
A
-
40
-
%
-42
-45
-
dBc
-
-
2.8 deg.C/W
MITSUBISHI
ELECTRIC
Oct-'03