MGFC40V6472_04 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC40V6472
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC40V6472A is an internally impedance matched
GaAs power FET especially designed for use in 6.4 - 7.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally matched to 50 ohm system
High output power
P1dB = 10W (TYP.) @ f=6.4 - 7.2 GHz
High power gain
GLP =9 dB (TYP.) @ f=6.4 - 7.2 GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=6.4 - 7.2 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=29 dBm S.C.L.
APPLICATION
item 01 : 6.4 - 7.2 GHz band power amplifier
item 51 : 6.4 - 7.2 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
V_DS = 10 (V)
ID = 2.4 (A)
Rg=50 (ohm) Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
OUTLINE DRAWING
Unit: millimeters (inches)
R1.25
2MIN
R1.2
24+/-0.3
(1)
0.6+/-0.15
17.4+8/-.00.+3/-0.2
(2) _15.8
2MIN
4.0+/-0.4
1.4
GF-18
(3)
20.4+/-0.2
13.4
0.1 ^2.4+/-0.2
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID Drain current
IGR Reverse gate current
IGF Forward gate current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25 Deg.C
Ratings
-15
-15
7.5
-20
42
42.8
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
Min
IDSS Saturated drain current
VDS = 3V , VGS = 0V
-
Gm
Transconductance
VDS = 3V , ID = 2.2A
-
VGS(off) Gate to source cut-off voltage
VDS = 3V , ID = 40mA
-2
P1dB
Output power at 1dB gain
compression
39.5
GLP Linear power gain
VDS=10V, ID(RF off)=2.4A, f=6.4-7.2GHz
7
ID
Drain current
-
PAE Power added efficiency
-
IM3 3rd order IM distortion *1
-42
Rth(ch-c) Thermal resistance *2
Delta Vf method
-
*1 : item -51,2 tone test,Po=29.0dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case
Limits
Typ
4.5
2
-3
40.5
9
2.4
32
-45
-
Unit
Max
6
A
-
S
-4
V
-
dBm
-
dB
-
A
-
%
-
dBc
3.5 Deg.C/W
MITSUBISHI
ELECTRIC
June/2004