MGFC40V5258_04 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC40V5258
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC40V5258 is an internally impedance-matched
OUTLINE DRAWING Unit: millimeters
GaAs power FET especially designed for use in 5.2 - 5.8
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
R1.25
24+/-0.3
(1)
FEATURES
0. 6 + / -0 . 15
Class A operation
R1.2
Internally matched to 50(ohm) system
High output power
P1dB = 10W (TYP.) @ f=5.2 - 5.8 GHz
(2)
High power gain
GLP = 10 dB (TYP.) @ f=5.2 - 5.8GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=5.2 - 5.8GHz
(3)
APPLICATION
item 01 : 5.2 - 5.8 GHz band power amplifier
item 51 : 5.2 - 5.8 GHz band digital radio communication
20.4+/-0.2
13.4
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 2.4 (A)
RG=50 (ohm)
GF-18
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR
Reverse gate current
IGF
Forward gate current
PT
Total power dissipation *1
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25deg.C
(Ta=25deg.C)
Ratings
-15
-15
7.5
-20
42
42.8
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain
compression
GLP
Linear power gain
ID
Drain current
P.A.E.
Power added efficiency
Rth(ch-c)
Thermal resistance *1
*1 : Channel-case
VDS = 3V , VGS = 0V
VDS = 3V , ID = 2.2A
VDS = 3V , ID = 40mA
VDS=10V, ID(RF off)=2.4A, f=5.2 - 5.8GHz
delta Vf method
Min.
-
-
-2
39.5
8
-
-
-
Limits
Typ.
4.5
2
-3
40.5
10
2.4
32
-
Max.
6
-
-4
-
-
-
-
3.5
Unit
A
S
V
dBm
dB
A
%
deg.C/W
MITSUBISHI
ELECTRIC
June/2004