MGFC39V7177A_11 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – C band internally matched power GaAs FET

< C band internally matched power GaAs FET >
MGFC39V7177A
7.1 – 7.7 GHz BAND / 8W
DESCRIPTION
The MGFC39V7177A is an internally impedance-matched
GaAs power FET especially designed for use in 7.1 – 7.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=8W (TYP.) @f=7.1 – 7.7GHz
 High power gain
GLP= 8.0dB (TYP.) @f=7.1 – 7.7GHz
 High power added efficiency
P.A.E.=28% (TYP.) @f=7.1 – 7.7GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=28dBm S.C.L
APPLICATION
 item 01 : 7.1 – 7.7 GHz band power amplifier
 item 51 : 7.1 – 7.7 GHz band digital radio communication
OUTLINE DRAW ING Unit : millimeters
21.0 +/-0.3
(1)
0.6 +/-0.15
(2)
(2)
R-1.6
(3)
10.7
17.0 +/-0.2
QUALITY
 IG
12.0
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=2.4A Refer to Bias Procedure  RG=50ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID
Drain current
7.5
IGR Reverse gate current
-20
IGF
Forward gate current
42
PT *1 Total power dissipation
42.8
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS=3V,VGS=0V
gm
Transconductance
VDS=3V,ID=2.2A
VGS(off) ^{Gate to source cut-off voltage}
VDS=3V,ID=20mA
P1dB
Output power at 1dB gain compression VDS=10V,ID(RF off)=2.4A
GLP
Linear Power Gain
f=7.1 – 7.7GHz
ID
Drain current
P.A.E.
Power added efficiency
IM3 *2
3rd order IM distortion
Rth(ch-c) *3 Thermal resistance
delta Vf method
*2 :item -51 ,2 tone test,Po=28dBm Single Carrier Level ,f=7.7GHz,delta f=10MHz
*3 :Channel-case
Min.
-
-
-
38
7
-
-
-42
-
Limits
Typ.
-
2
-
39.5
8
-
28
-45
-
Max.
7.5
-
-4.5
-
-
3
-
-
3.5
Unit
A
S
V
dBm
dB
A
%
dBc
C/W
Publication Date : Apr., 2011
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