MGFC39V3436_04 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC39V3436
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC39V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz
band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 8W (TYP.) @ f=3.4~3.6GHz
High power gain
GLP = 12.5 dB (TYP.) @ f=3.4~3.6GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=3.4~3.6GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.
OUTLINE DRAWING Unit : millimeters
21.0 +/-0.3
(1)
0.6 +/-0.15
(2)
(2)
R-1.6
(3)
10.7
17.0 +/-0.2
APPLICATION
item 01 : 3.4~3.6 GHz band power amplifier
item 51 : 3.4~3.6 GHz band digital radio communication
QUALITY GRADE
12.0
IG
RECOMMENDED BIAS CONDITIONS
VDS= 10 (V)
ID= 2.4 (A)
RG= 50 (ohm)
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR
Reverse gate current
IGF
Forward gate current
PT
Total power dissipation *1
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25 deg.C
(Ta=25 deg.C)
Ratings
Unit
-15
V
-15
V
7.5
A
-20
mA
42
mA
42.8
W
175
deg.C
-65/+175
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety
when making your circuit designs, with appropriate measures
such as (1)placement of substitutive, auxiliary circuits, (2)use of
non-flammable material or (3)prevention against any malfunction
or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25 deg.C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS=3V, VGS=0V
gm
Transconductance
VDS=3V, ID=2.2A
VGS(off) Gate to source cut-off voltage
VDS=3V, ID=20mA
P1dB
Output power at 1dB gain compression
GLP
Linear power gain
VDS=10V, ID(RF off)=2.4A, f=3.4~3.6GHz
ID
Drain current
P.A.E.
Power added efficiency
IM3
3rd order IM distortion
*1
Rth(ch-c) Thermal resistance
*2
Delta Vf method
*1 : item -51, 2 tone test, Po=28dBm Single Carrier Level, f=3.6GHz, Delta f=5MHz
*2 : Channel to case
Limits
Unit
Min. Typ. Max.
-
-
7.5
A
-
2
-
S
-
-
-4.5
V
38 39.5
-
dBm
10 12.5
-
dB
-
-
3
A
-
32
-
%
-42
-45
-
dBc
-
3
3.5 deg.C/W
MITSUBISHI
ELECTRIC
June/2004