MGFC36V7177A_04 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V7177A
7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
.
DESCRIPTION
The MGFC36V7177A is an internally impedance-matched
GaAs power FET especially designed for use in 7.1 ~ 7.7
GHz band amplifiers.The hermetically sealed metal-ceramic
OUTLINE DRAWING Unit : millimeters
package guarantees high reliability.
21.0 +/-0.3
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 4W (TYP.) @ f=7.1~7.7GHz
High power gain
GLP = 9 dB (TYP.) @ f=7.1~7.7GHz
High power added efficiency
P.A.E. = 30 % (TYP.) @ f=7.1~7.7GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.
(1)
0.6 +/-0.15
(2)
(2)
R-1.6
(3)
10.7
17.0 +/-0.2
APPLICATION
item 01 : 7.1~7.7 GHz band power amplifier
item 51 : 7.1~7.7 GHz band digital radio communication
QUALITY GRADE
12.0
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 1.2 (A)
Refer to Bias Procedure
RG= 100 (ohm)
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR
Reverse gate current
IGF
Forward gate current
PT
Total power dissipation *1
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25 deg.C
(Ta=25 deg.C)
Ratings
Unit
-15
V
-15
V
3.75
A
-10
mA
21
mA
25
W
175
deg.C
-65 / +175 deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to
safety when making your circuit designs, with appropriate
measures such as (1)placement of substitutive, auxiliary
circuits, (2)use of non-flammable material or (3)prevention
against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25 deg.C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS=3V, VGS=0V
gm
Transconductance
VDS=3V, ID=1.1A
VGS(off) Gate to source cut-off voltage
VDS=3V, ID=10mA
P1dB
Output power at 1dB gain compression
GLP
Linear power gain
VDS=10V, ID(RF off)=1.2A, f=7.1~7.7GHz
ID
Drain current
P.A.E.
Power added efficiency
IM3
3rd order IM distortion
*1
Rth(ch-c) Thermal resistance
*2
Delta Vf method
*1 : item -51, 2 tone test, Po=25dBm Single Carrier Level, f=7.7GHz, Delta f=10MHz
*2 : Channel to case
Limits
Unit
Min. Typ. Max.
-
-
3.75
A
-
1
-
S
-
-
-4.5
V
35 36.5
-
dBm
8
9
-
dB
-
-
1.8
A
-
30
-
%
-42
-45
-
dBc
-
5
6 deg.C/W
MITSUBISHI
ELECTRIC
June/2004