MGFC36V5867 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V5867
5.8 6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC36V5867 device is an internally impedance-matched
GaAs power FET especially designed for use in 5.8 6.75GHz
band amplifiers. The hermetically sealed metal-ceramic package
guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 36dBm (TYP.) @ f=5.8 6.75 GHz
High power gain
GLP = 10 dB (TYP.) @ f=5.8 6.75 GHz
OUTLINE DRAWING Unit : millimeters
21.0 +/-0.3
(1)
0.6 +/-0.15
(2)
(2)
R-1.6
(3)
APPLICATION
VSAT
10.7
17.0 +/-0.2
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID=1.2(A)
RG=100 (ohm)
12.0
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C)
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR
Revese gate current
IGF
Forward gate current
PT *1 Total power dissipation
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25deg.C
Ratings
-15
-15
3.75
-10
21
25
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS (Ta=25deg.C)
Symbol
Parameter
IDSS Saturated drain current
gm Transconductance
VGS(off) Pinch-off voltage
P1dB Output power at 1dB gain
GLP Linear power gain
ID Drain Current
P.A.E. Power added efficiency
Rth(ch-c) Thermal resistance
*1 : Channel-case
Test conditions
VDS=3V,VGS=0V
VDS=3V,ID=1.1A
VDS=3V,ID=10mA
VDS=10V,ID(RF off)=1.2A. f=5.8 6.75GHz
*1 delta Vf method
MITSUBISHI
ELECTRIC
Limits
Unit
Min. Typ. Max.
-
-
3.75
A
-
1
S
-
-
-4.5
V
35.0 36.0
-
dBm
8.5 10.0
-
dB
-
-
1.8
A
-
30
-
%
-
5
6 deg.C/W