MGFC36V4450A_11 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – C band internally matched power GaAs FET

< C band internally matched power GaAs FET >
MGFC36V4450A
4.4 – 5.0 GHz BAND / 4W
DESCRIPTION
The MGFC36V4450A is an internally impedance-matched
GaAs power FET especially designed for use in 4.4 – 5.0
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=4W (TYP.) @f=4.4 – 5.0GHz
 High power gain
GLP=12dB (TYP.) @f=4.4 – 5.0GHz
 High power added efficiency
P.A.E.=32% (TYP.) @f=4.4 – 5.0GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=25dBm S.C.L
APPLICATION
 item 01 : 4.4 – 5.0 GHz band power amplifier
 item 51 : 4.4 – 5.0 GHz band digital radio communication
OUTLINE DRAW ING Unit : millimeters
21.0 +/-0.3
(1)
0.6 +/-0.15
(2)
(2)
R-1.6
(3)
10.7
17.0 +/-0.2
QUALITY
 IG
12.0
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=1.2A Refer to Bias Procedure  RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID
Drain current
3.75
IGR Reverse gate current
-10
IGF
Forward gate current
21
PT *1 Total power dissipation
25
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
gm
VGS(off)
P1dB
GLP
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Linear Power Gain
VDS=3V,VGS=0V
VDS=3V,ID=1.1A
VDS=3V,ID=10mA
VDS=10V,ID(RF off)=1.2A
f=4.4 – 5.0GHz
ID
Drain current
P.A.E.
Power added efficiency
IM3 *2
3rd order IM distortion
Rth(ch-c) *3 Thermal resistance
delta Vf method
*2 :item -51 ,2 tone test,Po=25dBm Single Carrier Level ,f=5.0GHz,delta f=10MHz
*3 :Channel-case
Min.
-
-
-
35
11
-
-
-42
-
Limits
Typ.
-
1
-
37
12
-
32
-45
5
Max.
3.75
-
-4.5
-
-
1.8
-
-
6
Unit
A
S
V
dBm
dB
A
%
dBc
C/W
Publication Date : Apr., 2011
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