MGFC36V3742A_11 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – C band internally matched power GaAs FET

< C band internally matched power GaAs FET >
MGFC36V3742A
3.7 – 4.2 GHz BAND / 4W
DESCRIPTION
The MGFC36V3742A is an internally impedance-matched
GaAs power FET especially designed for use in 3.7 – 4.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=4W (TYP.) @f=3.7 – 4.2GHz
 High power gain
GLP=12.5dB (TYP.) @f=3.7 – 4.2GHz
 High power added efficiency
P.A.E.=33% (TYP.) @f=3.7 – 4.2GHz
 Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=25dBm S.C.L.
APPLICATION
 item 01 : 3.7 – 4.2 GHz band power amplifier
 item 51 : 3.7 – 4.2 GHz band digital radio communication
OUTLINE DRAW ING Unit : millimeters
21.0 +/-0.3
(1)
0.6 +/-0.15
(2)
(2)
R-1.6
(3)
10.7
17.0 +/-0.2
QUALITY
 IG
12.0
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=1.2A  RG=100ohm Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO ^{Gate to drain} breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID
Drain current
3.75
IGR Reverse gate current
-10
IGF
Forward gate current
21
PT *1 Total power dissipation
25
Tch
Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
Min.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
gm
Transconductance
VDS=3V,ID=1.1A
-
VGS(off) ^{Gate to source cut-off voltage}
VDS=3V,ID=10mA
-
P1dB
Output power at 1dB gain compression VDS=10V,ID(RF off)=1.2A
35
GLP
Linear Power Gain
f=3.7 – 4.2GHz
10
ID
Drain current
-
P.A.E.
Power added efficiency
-
IM3 *2
3^rd order IM distortion
-42
Rth(ch-c) *3 Thermal resistance
-
*2 :Item -51,2 tone test, Po=25dBm Single Carrier Level, f=4.2GHz, Delta f=10MHz
*3 :Channel-case
Limits
Typ.
-
1
-
37
12.5
-
33
-45
5
Max.
3.75
-
-4.5
-
-
1.8
-
-
6
Unit
A
S
V
dBm
dB
A
%
dBc
C/W
Publication Date : Apr., 2011
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