MGF7176C Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER

PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGF7176C
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
DESCRIPTION
The MGF7176C is a monolithic microwave integrated
circuit for use in CDMA base handheld phone.
FEATURES
Low voltage operation : Vd=3.0V
High output power : Po=28dBm typ. @f=1.75~1.78GHz
Low distortion : ACP=-46dBc max.
@Po=28dBm,1.25MHz off-set.
High efficiency : Id=560mA typ. @Po=28dBm
Single voltage operation (NVG include)
Enable to Gain control
Surface mount package
3 Stage Amplifier with gain control
External matching circuit is required
APPLICATION
1.7GHz band handheld phone
QUALITY GRADE
GG
PIN CONFIGURATION (TOP VIEW)
GND
OUT
GND
VSS
VD_LEV
VT
GND
IN
(7mmx6.1mmx1mm)
pin pitch 1.0mm
Block Diagram of this IC and Application Circuit Example.
Regulator
VDD2
VDD1
Battery
Pout
VD3
Matching
circuit
Negative voltage
generator
GND
VGC
VT
Matching
circuit
Pin
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MITSUBISHI
ELECTRIC
as of Feb.'98