MGF7170AC Datasheet, PDF (1/16 Pages) Mitsubishi Electric Semiconductor – UHF BAND GaAs POWER AMPLIFIER

Technical Note
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Specifications are subject to change without notice.
DESCRIPTION
The MGF7170AC is a monolithic microwave integrated
circuit for use in CDMA base handheld phone.
FEATURES
-Low voltage operation :
Vd=3.0V
-High output power :
Po=28dBm typ. @f=1.715~1.78GHz
-Low distortion :
ACP=-46dBc max. @Po=28dBm
-High efficiency :
Id=520mA typ. @Po=28dBm
-Small size :
7.0 x 6.1 x 1.1 mm
Single voltage operation (NVG include)
Surface mount package
2 Stage Amplifier
External matching circuit is required
APPLICATION
1.9GHz band handheld phone
QUALITY GRADE
GG
PIN CONFIGURATION
(TOP VIEW)
Pi
GND
Vd1
Ext
Vg
GND
GND
Po / Vd2
Pi : RF input
Po : RF output
Vd1 : Drain bias 1
Vd2 : Drain bias 2
Vg : Gate bias(positive bias)
GND : Connect to GND
Ext : Connect to Capacitor
CASE: Connect to GND
ES1:different pin configuration
Block Diagram of this IC and Application Circuit Example.
Regulator
VDD2
VDD1
Battery
Pout
VD2
Matching
circuit
VD1
VSS
Negative voltage
generator
HPA
MGF7170AC
Matching _Pin
circuit
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with
appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii)
prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC
(1/16)
Aug. '97