MGF7169C Datasheet, PDF (1/20 Pages) Mitsubishi Electric Semiconductor – UHF BAND GaAs POWER AMPLIFIER

Technical Note
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGF7169C
UHF BAND GaAs POWER AMPLIFIER
Specifications are subject to change without notice.
DESCRIPTION
The MGF7169C is a monolithic microwave integrated
circuit for use in CDMA base handheld phone.
FEATURES
Low voltage operation :
Vd=3.0V
High output power :
Po=28dBm typ. @f=1.85~1.91GHz
Low distortion :
ACP=-46dBc max. @Po=28dBm
High efficiency :
Id=520mA typ. @Po=28dBm
Small size :
7.0 x 6.1 x 1.1 mm
Surface mount package
2 Stage Amplifier
External matching circuit is required
APPLICATION
1.9GHz band handheld phone
QUALITY GRADE
GG
PIN CONFIGURATION
(TOP VIEW)
Pi
GND
Vg1
Vd1
GND
MC
Vd2 / Po
Vg2
Pi : RF input
Po : RF output
Vd1 : Drain bias 1
Vd2 : Drain bias 2
Vg : Gate bias
MC : Note1
GND : Connect to GND
CASE: Connect to GND
Note1:Connect to matching circuit
Block Diagram of this IC and Application Circuit Example.
Regulator
Battery
Pout
VD2
Matching
circuit
VD1
MGF7169C
HPA
VG1
VG2
Negative voltage
generator
VDD
Matching
circuit
Pin
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MITSUBISHI ELECTRIC
(1/20)
Aug. '97