MGF7168C Datasheet, PDF (1/12 Pages) Mitsubishi Electric Semiconductor – UHF BAND GaAs POWER AMPLIFIER

Technical Note
MITSUBISHI SEMICONDUCTOR<GaAsMMIC>
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
Specifications are subject to change without notice.
DESCRIPTION
MGF7168C is a monolithic microwave integrated
circuit for use in UHF-band power amplifier.
FEATURES
- Low voltage operation
Vd=3.2V
- High output power
Po=33dBm (typ.) @1710~1785MHz
Po=33dBm (typ.) @1850~1910MHz
- High efficiency
Id=1250mA (typ. ) @Po=33dBm
- Small size
6.1x7.0x1.10mm
- Surface mount package
- 2 Stage Amplifier
- External matching circuit is required
APPLICATION
- 1.8GHz band handheld phone
- 1.9GHz band handheld phone
QUALITY GRADE
- GG
PIN CONFIGURATION (TOP VIEW)
Pi
GND
Vg1
Vd1
GND
R
Vd2 / Po
Vg2
Pin ^{: RF input (Note1)}
Pout ^{: RF output (Note1)}
Vd1 ^{: Drain bias 1}
Vd2 ^{: Drain bias 2}
Vg1 ^{: Gate bias 1}
Vg2 ^{: Gate bias 2}
GND ^{: Connect to GND}
CASE ^{: Connect to GND}
R ^{: Connect to GND through}
the resistor
Note1: Connect to matching circuits.
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MITSUBISHI ELECTRIC
(1/12)
Mar.'97