MGF7124A Datasheet, PDF (1/1 Pages) Mitsubishi Electric Semiconductor – 1.9GHz BAND AMPLIFIER MMIC

MITSUBISHI SEMICONDUCTOR GaAs MMIC
MGF7124A
1.9GHz BAND AMPLIFIER MMIC
DESCRIPTION
MGF7124A is a monolithic microwave integrated circuit for use in
1.9GHz band power amplifiers.
FEATURES
• High output power
PO=26dBm,π/4DQPSK
• Small size
5.8×12.2×1.8mm
• Light weight
• Surface mount package
• Low supply voltage operation
VD=4.8V
• Enable to control gain
VGdual=0/-4V
APPLICATION
Base-station of Japanese personal handyphone system(PHS)
QUALITY GRADE
• IG
OUTLINE DRAWING
1
Pi
2
VD1
3
NU
4
VD2
8.4
12.2
Unit:millimeters
8
VG1
7
VGdual
6
VG2
5
Po
Pi
VD1
VD2
GND
: RF INPUT
: 1st DRAIN BIAS
: 2nd DRAIN BIAS
: GND
GC-3
VG1
VG2
VGdual
PO
: 1st GATE BIAS
: 2nd GATE BIAS
: GAIN CONTROL
: RF OUTPUT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VD1,VD2 Drain voltage
VG1,VG2,
VGdual
Gate voltage
ID1,ID2,ID3 Drain current
Pi
TC(op)
Input power
Operating case temperature
Tstg
Storage temperature
Ratings
5.5
-5.5
500
10
-20 to +90
-35 to +120
Unit
V
V
mA
dBm
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
f
Frequency
VD
Drain supply voltage
GP
Power gain
IDt
Total drain current
Gcon
Gain control range
A.C.P
(±600kHz)
A.C.P
(±900kHz)
Adjacent channel power
Note1: ZS=ZL=50Ω,IDt-bias=ID1+ID2=280mA
PO=26dBm,f=1.9GHz,π/4DQPSK
VGdual=0/-4V,PO=26dBm,f=1.9GHz
PO=26dBm,f(ACP)=±600kHz,
f=1.9GHz,π/4DQPSK
PO=26dBm,f(ACP)=±900kHz,
f=1.9GHz,π/4DQPSK
Limits
(Note1) Min Typ Max
1.89
–
1.92
4.8
5.0
5.2
21
–
–
–
300
–
20
–
–
–
–
-56
Unit
GHz
V
dB
mA
dB
dBc
–
–
-62 dBc
Nov. ´97