MGF4953B Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package

Nｏｖ./2006
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4953B super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=20GHz
NFmin. = 0.55dB (Typ.)
High associated gain
@ f=20GHz
Gs = 10.5dB (Typ.)
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
V_DS=2V , I_D=10mA
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 3000pcs./reel
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
Symbol
Parameter
Ratings
Unit
V_GDO
V_GSO
I_D
Gate to drain voltage
Gate to source voltage
Drain current
-4
V
-4
V
60
mA
PT
Total power dissipation
50
mW
T_ch
Channel temperature
T_stg
Storage temperature
125
°C
-65 to +125
°C
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effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Synbol
Parameter
V_(BR)GDO
I_GSS
I_DSS
V_GS(off)
Gs
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Associated gain
Minimum noise figure
(Ta=25°C )
Test conditions
I_G=-10µA
V_GS=-2V,V_DS=0V
V_GS=0V,V_DS=2V
V_DS=2V,I_D=500µA
V_DS=2V,I_D=10mA
f=20GHz
MIN.
-3
--
15
-0.1
9.0
--
Limits
TYP.
--
--
--
--
10.5
0.55
Unit
MAX
--
V
50
µA
60
mA
-1.5
V
--
dB
0.80
dB
MITSUBISHI
(1/5)
Nov./2006