MGF4953A_11 Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – Low Noise GaAs HEMT

< Low Noise GaAs HEMT >
MGF4953A
Leadless ceramic package
DESCRIPTION
The MGF4953A super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in C to K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.35dB (Typ.)
High associated gain
@ f=12GHz
Gs = 13.5dB (Typ.)
Fig.1
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 10,000pcs/reel
RoHS COMPLIANT
MGF4953A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS (Ta=25C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-3
V
VGSO
Gate to source voltage
-3
V
ID
Drain current
60
mA
PT
Total power dissipation
50
mW
Tch
Channel temperature
125
C
Tstg
Storage temperature
-55 to +125
C
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25C )
Test conditions
V_{(BR)GDO Gate to drain breakdown voltage}
IG=-10A
I_{GSS Gate to source leakage current}
VGS=-2V,VDS=0V
I_{DSS Saturated drain current}
VGS=0V,VDS=2V
V_{GS(off) Gate to source cut-off voltage}
VDS=2V,ID=500A
Gs Associated gain
VDS=2V,
NFmin. Minimum noise figure
ID=7.5mA,f=12GHz
Note: Gs and NFmin. are tested with sampling inspection.
MIN.
-3
--
15
-0.1
12.0
--
Limits
TYP.
--
--
--
--
13.5
0.35
Unit
MAX
--
V
50
A
60
mA
-1.5
V
--
dB
0.50
dB
Publication Date : Apr., 2011
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