MGF4941AL_11 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – Micro-X type plastic package

< Low Noise GaAs HEMT >
MGF4941AL
Micro-X type plastic package
DESCRIPTION
The MGF4941AL super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in Ku band amplifiers.
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.35dB (Typ.)
High associated gain @ f=12GHz
Gs = 13.5dB (Typ.)
Outline Drawing
Fig.1
APPLICATION
L to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
V_DS=2V, I_D=10mA
ORDERRING INFORMATION
Tape & reel 4000pcs./reel
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RoHS COMPLIANT
MGF4941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-3
V
VGSO
Gate to source voltage
-3
V
ID
Drain current
IDSS
mA
PT
Total power dissipation
50
mW
Tch
Channel temperature
125
°C
Tstg
Storage temperature
-55 to +125
°C
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25°C )
Test conditions
V_(BR)GDO Gate to drain breakdown voltage
IG=-10µA
I_GSS Gate to source leakage current
VGS=-2V,VDS=0V
I_DSS Saturated drain current
VGS=0V,VDS=2V
V_GS(off) Gate to source cut-off voltage
VDS=2V,ID=500µA
Gs Associated gain
VDS=2V,
NFmin. Minimum noise figure
ID=10mA,f=12GHz
Note: Gs and NFmin. are tested with sampling inspection.
MIN.
-3
--
15
-0.1
12.0
--
Limits
TYP.
--
--
--
--
13.5
0.35
Unit
MAX
--
V
50
µA
60
mA
-1.5
V
--
dB
0.5
dB
Publication Date : Apr., 2011
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