MGF4934AM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)

Feb./2006
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
The MGF4934AM super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.60dB (Typ.)
High associated gain
@ f=12GHz
Gs = 12.5dB (Typ.)
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
V_DS=2V , I_D=10mA
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 3000pcs/reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making
semiconductor products better and more reliable , but there is always the
possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury , fire or property damage. Remember to give due
consideration to safety when making your circuit designs , with appropriate
measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_GDO
V_GSO
I_D
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
PT
Total power dissipation
T_ch
Channel temperature
T_stg
Storage temperature
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25°C )
Ratings
Unit
-4
V
-4
V
IDSS
mA
50
mW
125
°C
-55 to +125
°C
(Ta=25°C )
Test conditions
V_(BR)GDO
I_GSS
I_DSS
V_GS(off)
Gs
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Associated gain
Minimum noise figure
I_G=-10µA
V_GS=-2V,V_DS=0V
V_GS=0V,V_DS=2V
V_DS=2V,I_D=500µA
V_DS=2V,
I_D=10mA,f=12GHz
MIN.
-3.5
--
12
-0.1
11.5
--
Limits
TYP.
--
--
--
--
12.5
0.60
Unit
MAX
--
V
50
µA
60
mA
-1.5
V
--
dB
0.80
dB
MITSUBISHI
(1/5)
Feb./2005