MGF4921AM Datasheet, PDF (1/10 Pages) Mitsubishi Electric Semiconductor – 4pin flat lead package

< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
DESCRIPTION
The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in L to C band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
Outline Drawing
FEATURES
・Low noise figure
NFmin. = 0.35dB (Typ.) @ f=2.4GHz
NFmin. = 0.35dB (Typ.) @ f=4GHz
・High associated gain
Gs = 18.0dB (Typ.) @ f=2.4GHz
Gs = 13.0dB (Typ.) @ f=4GHz
Fig.1
APPLICATION
L to C band low noise amplifiers
QUALITY GRADE
GG
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10~25mA
ORDERING INFORMATION
Tape & reel 15000pcs/reel
RoHS COMPLIANT
MGF4921AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
PT
Total power dissipation
Tch
Channel temperature
Tstg
Storage temperature
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25C )
Ratings
Unit
-3
V
-3
V
IDSS
mA
130
mW
125
C
-55 to +125
C
(Ta=25C)
Test conditions
V_{(BR)GDO Gate to drain breakdown voltage}
IG=-78A
IGSS _{Gate to source leakage current}
VGS=-2V,VDS=0V
IDSS _{Saturated drain current}
VGS=0V,VDS=2V
VGS(off) _{Gate to source cut-off voltage}
VDS=2V,ID=390A
Gs
Associated gain
VDS=2V,
NFmin. Minimum noise figure
ID=10mA, f=2.4GHz
Gs
Associated gain
VDS=2V,
NFmin. Minimum noise figure
ID=15mA, f=4GHz
Note 1: Gs and NFmin. @2.4GHz are not tested.
Note 2: Gs and NFmin. @4GHz are tested with sampling inspection.
MIN.
-3.5
--
30
-0.2
--
--
11.5
--
Limits
TYP.
--
--
--
--
18
0.35
13
0.35
Unit
MAX
--
V
50
A
150
mA
-1.5
V
--
dB
--
dB
--
dB
0.55
dB
Publication Date : Oct., 2011
1