MGF491XG Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – SUPER LOW NOISE InGaAs HEMT

MITSUBISHI SEMICONDUCTOR GaAs FET
MGF491xG Series
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF491xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to Ku band amplifiers.
The hermetically sealed metal-ceramic package assures
minimumu parasitic losses, and has a configuration suitable for
microstrip circuits.
The MGF491*G series is mounted in the super 12 tape.
FEATURES
• Low noise figure
@f=12GHz
MGF4916G:NFmin.=0.80dB(MAX.)
MGF4919G:NFmin.=0.50dB(MAX.)
• High associated gain @f=12GHz
Gs=12.0dB(MIN.)
APPLICATION
L to Ku band low noise amplifiers.
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=2V,ID=10mA
• Refer to Bias Procedure
OUTLINE DRAWING
4.0±0.2
1.85±0.2
1
0.5±0.15
Unit:millimeters
2
2
0.5±0.15
3
ø1.8±0.2
GD-16
1 GATE
2 SOURCE
3 DRAIN
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
Unit
VGDO Gate to drain voltage
-4
V
VGSO
ID
Gate to source voltage
Drain current
-4
V
60
mA
PT
Total power dissipation
50
mW
Tch
Channel temperature
125
˚C
Tstg
Storage temperature
-65 to +125
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
V(BR)GDO
IGSS
IDSS
VGs(off)
gm
GS
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
VDS=2V,ID=10mA
f=12GHz
MGF4916G
MGF4919G
Limits
Unit
Min Typ Max
-3
–
–
V
–
–
50
µA
15
–
60
mA
-0.1
–
-1.5
V
–
75
–
mS
12.0 13.5 –
dB
–
– 0.80 dB
–
–
0.50
dB
Nov. ´97