MGF4851A Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4851A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4851A HEMT (High Electron Mobility Transistor) is
designed for use in S to K band amplifiers and oscillators.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
High gain and High P1dB
Glp=11dB , P1dB=14.5dBm (Typ.) @ f=12GHz
APPLICATION
S to K band power Amplifiers
QUALITY GRADE
GG
ORDERING INFORMATION
Tape & reel 3000pcs./reel
Fig.1
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
Symbol
Parameter
Ratings
Unit
V_GDO
Gate to drain voltage
-5
V
V_GSO
Gate to source voltage
-5
V
I_D
Drain current
IDSS
mA
PT
Total power dissipation
100
mW
T_ch
Channel temperature
125
°C
T_stg
Storage temperature
-65~125
°C
ELECTRICAL CHARACTERISTICS
Synbol
Parameter
(Ta=25°C )
Test conditions
V(BR)GDO
I_DSS
V_GS(off)
P1dB
Glp
Gate to drain breakdown voltage
Saturated drain current
Gate to source cut-off voltage
Output Power at 1dB gain
Compression
Linear Power Gain
Ig=-10µA
V_GS=0V,V_DS=2.5V
V_DS=2.5V,I_D=500µA
V_DS=2.5V,ID=25mA
f=12GHz
V_DS=2.5V,ID=25mA
f=12GHz,Pin=-5dBm
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MIN.
-5
35
-0.1
12
9
Limits
TYP.
-8
60
-0.8
14.5
11
MAX
--
120
-2.0
--
--
Unit
V
mA
V
dBm
dB
MITSUBISHI
(1/5)
June/2004