MGF4714CP Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT

MITSUBISHI SEMICONDUCTOR GaAs FET
MGF4714CP
PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF4714CP low-noise HEMT(High Electron Mobility
Transistor) is designed for use in L to Ku band amplifiers.
The plastic mold package offer high cost performance, and has a
configuration suitable for microstrip circuits.
The MGF4714CP is mounted in Super 12 tape.
FEATURES
• Low noise figure
NFmin.=1.00dB(MAX.)
• High associated gain
Gs=11.0dB(MIN.)
@f=12GHz
@f=12GHz
APPLICATION
L to Ku band low noise amplifiers.
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=2V,ID=10mA
• Refer to Bias Procedure
OUTLINE DRAWING
(0.6)
1
Unit:millimeters
2
2
(ø1.2)
3
0.5±0.1
2.2±0.2
(8˚)
(R0.1) (R0.1)
4.0±0.3
GD-22
1 Gate
2 Source
3 Drain
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
Unit
VGDO Gate to drain voltage
-4
V
VGSO
ID
Gate to source voltage
Drain current
-4
V
60
mA
PT
Total power dissipation
50
mW
Tch
Channel temperature
Tstg
Storage temperature
125
˚C
-65 to +125
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
V(BR)GDO
IGSS
IDSS
VGS(off)
gm
GS
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
VDS=2V,ID=10mA
f=12GHz
Limits
Unit
Min Typ Max
-3
–
–
V
–
–
50
µA
15
–
60
mA
-0.1
–
-1.5
V
–
55
–
mS
11.0
–
–
dB
–
– 1.00 dB
Nov. ´97