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MGF1954A Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – Microwave Power MES FET
Aug. /2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1954A
Microwave Power MES FET (Leadless Ceramic Package)
DESCRIPTION
The MGF1954A is designed for use in S to Ku band power
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
High gain and High P1dB
Glp=5.0dB , P1dB=23dBm (Typ.) @ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITION
VDS=6V, ID=100mA
ORDERING INFORMATION
Tape & reel 3000pcs./reel
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-10
V
VGSO
Gate to source voltage
-10
V
ID
Drain current
400
mA
PT
Total power dissipation
1
W
Tch
Channel temperature
125
°C
Tstg
Storage temperature
-65 to +125
°C
ELECTRICAL CHARACTERISTICS
Synbol
Parameter
(Ta=25°C )
Test conditions
V(BR)GDO
IDSS
VGS(off)
Po
Glp
Gate to drain breakdown voltage
Saturated drain current
Gate to source cut-off voltage
Output Power at 1dB gain
compression
Linear Power Gain
Ig=-100µA
VGS=0V,VDS=3V
VDS=3V,ID=1mA
VDS=6V,ID=100mA
f=12GHz
VDS=6V,ID=100mA
f=12GHz,Pin=5dBm
Fig.1
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MIN.
-10
105
-0.3
21
3
Limits
TYP.
-15
200
-1.4
23
5
MAX
--
400
-3.5
--
--
Unit
V
mA
V
dBm
dB
MITSUBISHI
(1/5)
Aug./2004